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DG4157
Vishay Siliconix
Low Voltage, 1- Single SPDT Analog Switch (1:2 Multiplexer) with Power Down Protection
DESCRIPTION
The DG4157 is a high performance single pole double throw analog switch designed for 1.8 V to 5.5 V operation with single power rail. Fabricated with high density CMOS technology, the device achieves low on resistance as 1 at 4.5 V power supply and fast switching speed. The - 3 dB bandwidth is typically 117 MHz. The DG4157 features break before make switch performance, and guarantees logic HIGH control input threshold as low as 1.4 V over the range up to 5.5 V. It can handle both analog and digital signals and permits signals with amplitudes of up to VCC to be transmitted in either direction. Power down protection circuit is built in to prevent abnormal current path through signal pins during power down condition. Each output pin (A, B0, or B1) can withstand greater than 8 kV (human body model). It is available in both SC-70-6 and miniQFN6 packages. The features make it an ideal part for the switching of audio, video, and data stream.
FEATURES
* Direct cross of industry standard xxx4157 * 1.8 V to 5.5 V operation voltage range * Guaranteed 1.4 V logic high input threshold at VCC = 5.5 V * 117 MHz, - 3 dB bandwidth * Low on-resistance * Power down protection
Pb-free Available
RoHS*
COMPLIANT
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
SC-70-6L
miniQFN-6L
B1 GND B0
1 2 3
6 5 4
S V+ A
S V+ A
1 2 3
6
B1
5 GND 4 B0
Top View
Top View
G0xx Pin 1 Device Marking: G0xx xx = Date/Lot Traceability Code
Pin 1
Fx
Device Marking: Fx x = Date/Lot Traceability Code
TRUTH TABLE
Logic Input (S) 0 1 Function B0 Connected to A B1 Connected to A
ORDERING INFORMATION
Temp. Range - 40 C to 85 C Package SC-70-6L miniQFN-6L Part Number DG4157DL-T1-E3 DG4157DN-T1-E4
* Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 68800 S-82827-Rev. C, 24-Nov-08 www.vishay.com 1
DG4157
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter Reference V+ to GND S, A, Ba Continuous Current (Any terminal) Peak Current (Pulsed at 1 ms, 10 % duty cycle) Storage Temperature Power Dissipation (Packages)b D Suffix SC-70-6Lc miniQFN-6Ld Limit - 0.3 to + 6 - 0.3 to (V+ + 0.3) 200 400 - 65 to 150 250 160 Unit V mA C mW
Notes: a. Signals on A, or B or S exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 3.1 mW/C above 70 C. d. Derate 2.0 mW/C above 70 C.
SPECIFICATIONS
Test Conditions Unless Otherwise Specified Parameter DC Characteristics V+ = 2.7 V, B0 or B1 = 1.5 V, IO = 100 mA On Resistance RON V+ = 4.5 V, B0 or B1 = 3.5 V, IO = 100 mA V+ = 2.7 V, B0 or B1 = 0.75 V, 1.5 V, IO = 100 mA V+ = 4.5 V, B0 or B1 = 1 V, 3.5 V, IO = 100 mA V+ = 2.7 V, B0 or B1 = 1.5 V, IO = 100 mA V+ = 4.5 V, B0 or B1 = 3.5 V, IO = 100 mA V+ = 5.5 V, A = 1 V, 4.5 V B0 or B1 = 4.5 V, 1 V or Floating Room Full Room Full Room Room Full Room Room Full Room Full Room Full Full Full Full Full V+ = 5.5 V, VIN = 0 V, 5.5 V Room Full -1 1.8 0.05 -2 - 20 -4 - 40 1.4 0.4 1 5.5 0.5 1 0.04 0.05 0.12 0.15 2 20 4 40 nA 0.2 0.14 0.3 0.4 0.95 1.7 2.5 3 1.2 1.4 Symbol V+ = 3.0 V, VIN = 0 V or V+e Temp.a Limits - 40 C to 85 C Min.b Typ.c Max.b Unit
On Resistance Flatness
RFLATNESS
On Resistance Match
RON
Switch OFF Leakage Current Switch ON Leakage Current Digital Control Input, High Voltage Input, Low Voltage Input Current Power Supply Power Supply Range Quiescent Supply Current
IOFF ION
VINH VINL IINH, IINL V+ I+
V+ = 2.7 V to 5.5 V VIN = 0 or V+
V A V A
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Document Number: 68800 S-82827-Rev. C, 24-Nov-08
DG4157
Vishay Siliconix
SPECIFICATIONS
Test Conditions Unless Otherwise Specified Parameter AC Characteristics V+ = 2.7 V, B0 or B1 = 1.5 V, RL = 50 , CL = 35 pF V+ = 4.5 V, B0 or B1 = 1.5 V, RL = 50 , CL = 35 pF V+ = 2.7 V, B0 or B1 = 1.5 V, RL = 50 , CL = 35 pF V+ = 4.5 V, B0 or B1 = 1.5 V, RL = 50 , CL = 35 pF V+ = 2.7 V, B0 = B1 = 1.5 V, RL = 50 , CL = 35 pF V+ = 4.5 V, B0 = B1 = 1.5 V, RL = 50 , CL = 35 pF CL = 1 nF, RGEN = 0 , VGEN = 0 V RL= 50 , f = 1 MHz RL= 50 , f = 10 MHz RL= 50 , CL = 5 pF, f = 1 MHz RL= 50 , CL = 5 pF, f = 10 MHz RL= 50 RL= 600 , VIN = 0.5 V, f = 20 to 20 kHz Room Full Room Full Room Full Room Full 1 Room 1 Room Room Room Room Room 15 50 - 58 - 31 - 63 - 36 117 0.02 20 RL= 50 , CL = 5 pF, f = 1 MHz Room 57 5 pF MHz % dB pC 26 8 12 22 40 55 60 37 40 27 30 23 25 ns Symbol V+ = 3.0 V, VIN = 0 V or V+e Temp.a Limits - 40 C to 85 C Min.b Typ.c Max.b Unit
Turn-On Timed
tON
Turn-Off Timed
tOFF
Break-Before-Make
Timed
tBBM
Charge Injectiond Off Isolationd Crosstalkd Bandwidthd Total Harmonic Distortiond Capacitance BX Port Off Capacitanced A Port On Capacitanced Capacitanced Control Pin
Q OIRR XTALK BW THD CB(OFF) CA(ON) CIN
Notes: a. Room = 25 C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Document Number: 68800 S-82827-Rev. C, 24-Nov-08
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DG4157
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted
7 6 R ON - On Resistance () 5 V+ = 2.7 V 4 3 2 V+ = 5.5 V 1 0 0 1 2 3 4 5 6 VA - Analog Voltage (V) 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VA - Analog Voltage (V) V+ = 3.6 V V+ = 3 V V+ = 4.5 V V+ = 1.8 V, IB = 5 mA V+ = 2 V, IB = 5 mA R ON - On Resistance () V+ = 2.35 V, IB = 10 mA IB = 100 mA 2.0 2.5 + 85 C V+ = 2.7 V
1.5 + 25 C 1.0 - 40 C
0.5
RON vs. VA and Supply Voltage
10 V+ = 5.5 V 1000 Leakage Current (pA) 1 10 000
RON vs. VD and Temperature
V+ = 5.5 V IA(OFF)
I+ - Supply Current (nA)
IA(ON)
100 IB0(OFF) 10
0.1
0.01 - 40
- 20
0
20
40
60
80
1 - 40
- 20
0
20
40
60
80
100
Temperature (C)
Temperature (C)
Supply Current vs. Temperature
700 500 Leakage Current (pA) 300 100 - 100 I A(ON) - 300 - 500 V+ = 5.5 V - 700 0 1 2 3 4 5 VA - Analog Voltage (V) I B0(OFF) 100 80 I A(OFF) Q - Charge Injection (pC) 60 40 20 0 - 20 - 40
Leakage Current vs. Temperature
C L = 1nF Drain
V+ = + 4.5 V V+ = + 5.5 V
V+ = + 1.8 V V+ = + 2.7 V
V+ = + 3 V V+ = + 3.6 V
- 60 - 80 0 1 2 3
4
5
6
Analog Voltage (V)
Leakage vs. Analog Voltage
CECA Charge Injection vs. Analog Voltage
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Document Number: 68800 S-82827-Rev. C, 24-Nov-08
DG4157
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted
50 45 tON, t OFF - Switching Time (ns) 40 35 30 25 20 15 10 5 0 - 40 0.4 - 20 0 20 40 60 80 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Temperature (C) V+ - Supply Voltage (V) t OFF V+ = 2.7 V t OFF V+ = 4.5 V t ON V+ = 4.5 V t ON V+ = 2.7 V VT - Switching Threshold (V) 1.2 1.4 - 40 C to 85 C
1.0
0.8
0.6
Switching Time vs. Temperature
0 -2 -4 OIRR, XTALK (dB) -6 Loss (dB) -8 - 10 - 12 - 14 - 16 100K V+ = 3 V R L = 50 0 - 10 - 20 - 30
Switching Threshold vs. Supply Voltage
V+ = 3 V R L = 50
OIRR - 40 - 50 - 60 - 70 - 80 - 90 100K XTALK
1M
10M Frequency (Hz)
100M
1G
1M
10M Frequency (Hz)
100M
1G
Insertion Loss vs. Frequency
Off-Isolation and Crosstalk vs. Frequency
Document Number: 68800 S-82827-Rev. C, 24-Nov-08
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DG4157
Vishay Siliconix
TEST CIRCUITS
V+ Logic Input V+ Switch Input B1 or B0 S Logic Input GND 0V CL (includes fixture and stray capacitance) VOUT = VA RL R L + R ON RL 50 CL 35 pF A Switch Output VOUT 0.9 x V OUT Switch Output 0V tON tOFF
VINH 50 % VINL
tr < 5 ns tf < 5 ns
Figure 1. Switching Time
V+ Logic Input A VO RL 50 CL 35 pF VINH VINL tr < 5 ns tf < 5 ns
V+ B1 B0 B1 B0 S GND
B0 = B1 VO Switch Output 0V tD tD 90 %
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
Rgen + Vgen
V+ A S GND B0 or B1 VOUT VOUT S CL On
VOUT
Off Q = VOUT x CL
On
S depends on switch configuration: input polarity determined by sense of switch.
Figure 3. Charge Injection
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Document Number: 68800 S-82827-Rev. C, 24-Nov-08
DG4157
Vishay Siliconix
TEST CIRCUITS
V+ 10 nF
V+ A S B0 or B1 B0 / B1 RL Off Isolation = 20 log GND VA 0 V, V+
Analyzer
Figure 4. Off-Isolation
V+ 10 nF
V+ A Meter S 0 V, V+ B0 or B1 GND f = 1 MHz Impedance Analyzer
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68800.
Document Number: 68800 S-82827-Rev. C, 24-Nov-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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